Controllable growth of vertically aligned graphene on C-face SiC

Controllable growth of vertically aligned graphene on C-face SiC

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as...

Stacking of adjacent graphene layers grown on C-face SiC

Controllable viscoelastic behavior of vertically aligned carbon nanotube arrays

We have characterized the mechanical behavior of aligned carbon nanotube (CNT) arrays that serve as foam-like energy absorbing materials, by using atomic force microscope indentation. It is shown that the mechanical properties (e.g. elastic modulus, adhesion force, and energy dissipation) of aligned CNT arrays are dependent on the length of CNTs as well as chemical environment that surrounds CN...

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Effects of aluminum on epitaxial graphene grown on C-face SiC